BYW80-200 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

Ultrafast Rectifier
INCHANGE Semiconductor
BYW80-200
FEATURES
·Suited for SMPS
·Very low Forward losses
·High surge current capability
·High avalanche energy capability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Signal chip rectifier suited for switched mode power
supplies and high frequency DC to DC converters.
This device is intended for use in low voltage ,high
frequency inverters,free wheeling and polarity protection
application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
VALUE UNIT
200
V
10
A
IF(RMS)
RMS forward current
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
100
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
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