BYW51-200 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

Ultrafast Rectifier
INCHANGE Semiconductor
BYW51-200
FEATURES
·High surge capacity
·Low Forward Voltage
·Low Leakage Current
·150℃ Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dual center tap rectifier suited for switched mode power
supplies and high frequency DC to DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current Per Diode
Per device
10
20
A
IF(RMS)
RMS forward current
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
TJ
Junction Temperature
20
A
100
A
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}