BYV32-200 Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE TM Power Rectifier

Ultrafast Rectifier
INCHANGE Semiconductor
BYV32-200
FEATURES
·High surge capacity
·Low Forward Voltage
·Low Leakage Current
·150℃ Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power supply-output rectification
·Power management
·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
8
16
A
IFM
Peak Repetitive Forward Current (Rated VR,
Square Wave,20kHz)
Per Diode Leg
16
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
100
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
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