BUZ941Z-220 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU941Z
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
·High DC current gain
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
ICM
Collector Current-Peak
IB
Base Current
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
400
V
5
V
15
A
30
A
1
A
5
A
150
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W
isc website：www.iscsemi.com
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