 English |
|
|
|
|
|
|
|
| BUZ80A Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode) | |||
| |||
|
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ80A
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37â
3
A
Ptot
Total Dissipation@TC=25â
75
W
Tj
Max. Operating Junction Temperature -65-150 â
Tstg
Storage Temperature Range
-65-150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 â/W
Rth j-a Thermal Resistance,Junction to Ambient
75 â/W
isc websiteï¼www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese