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| BUZ80 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ80
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37â
3.4
A
Ptot
Total Dissipation@TC=25â
100
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-65-150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.25 â/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5 â/W
isc websiteï¼www.iscsemi.cn
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