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| BUZ76A Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ76A
DESCRIPTION
·2.6A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·applications such as switching regulators, switching
converters, motor drivers,relay drivers, and drivers for
high power bipolar switching transistors requiring high
speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37â
2.6
A
Ptot
Total Dissipation@TC=25â
40
W
Tj
Max. Operating Junction Temperature -55-150 â
Tstg
Storage Temperature Range
-55-150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 â/W
75 â/W
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