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| BUZ76 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ76
DESCRIPTION
·3A,400V
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.8Ω(Max)
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·switching regulators, switching converters
·motor drivers,relay drivers and drivers for high-power
Bipolar switching transistors reguiring high speed and
gate-driver power.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37â
3
A
Ptot
Total Dissipation@TC=25â
40
W
Tj
Max. Operating Junction Temperature -55-150 â
Tstg
Storage Temperature Range
-55-150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 â/W
75 â/W
isc websiteï¼www.iscsemi.cn
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