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| BUZ73A Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ73A
DESCRIPTION
·Drain Current âID= 5.8A@ TC=37â
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.6Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·switching regulators, switching converters
·motor drivers,relay drivers and drivers for high-power
Bipolar switching transistors reguiring high speed and
gate-driver power.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
5.8
A
Total Dissipation@TC=25â
40
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 â/W
75 â/W
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