BUZ72 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ72
·FEATURES
·Low R_DS(on)
·V_GS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·High Input Impedance
·Low Drive Requirements
·Majority Carrier Device
·DESCRITION
·Designed especially for applications such as
switching regulators, switching converters,
motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
9
A
IDM
Drain Current-Single Plused
36
A
PD
Total Dissipation @TC=25℃
40
W
T_j
Max. Operating Junction Temperature -55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
3.1
℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient
75
℃/W
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