BUZ63 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – main ratings

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ63
DESCRIPTION
·7.5A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·applications such as switching regulators, switching
converters, motor drivers,relay drivers, and drivers for
high power bipolar switching transistors requiring high
speed and low gate drive power.
applications such as switching regulators
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
400
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
7.5
A
Total Dissipation@TC=25℃
125
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
1.6 ℃/W
35 ℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn