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| BUZ42 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ42
DESCRIPTION
·4A, 500V
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
⢠Related Literature
APPLICATIONS
·applications such as switching regulators,
switching converters, motor drivers,relay drivers, and
drivers for high power bipolar switching
transistors requiring high speed and low gate drive power
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
4
A
Total Dissipation@TC=25â
75
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67 â/W
75 â/W
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