BUZ211 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – SOA is Power Dissipation Limited

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ211
DESCRIPTION
·Static Drain-Source On-Resistance
: R_DS(on) = 0.8Ω(Max)
·SOA is Power Dissipation Limited
APPLICATIONS
designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and
drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
9
A
Total Dissipation@TC=25℃
125
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc website：www.iscsemi.cn
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