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| BUZ11A Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ11A
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.045Ω(Max)
·Avalanche rugged technology
·High current capability
·175â Operating Temperature
APPLICATIONS
·High current,high speed switching
·Solenoid and relay drivers
·Regulators
·DC-DC & DC-AC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
50
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
26
A
Total Dissipation@TC=25â
75
W
Max. Operating Junction Temperature -55~175 â
Storage Temperature Range
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67 â/W
75 â/W
isc websiteï¼www.iscsemi.cn
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