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| BUZ104 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ104
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max)
·dv/dt rated
·Ultra low on-resistance
·175â operating temperature
APPLICATIONS
·High current , high speed switching
·Solenoid and relay drivers
·DC-DC & DC-AC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
50
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
17.5
A
Total Dissipation@TC=25â
60
W
Max. Operating Junction Temperature -55~175 â
Storage Temperature Range
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
2.5 â/W
75 â/W
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