BUY89 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY89
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V (Min)
APPLICATIONS
·Designed for use in AC motor control systems from three-
phase mains.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CES
Collector- Emitter Voltage (V_BE= 0)
1500
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
I_CSM
Collector Current-Peak
Non-repetitive
I_BB
Base Current
10
A
15
A
4
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.12 ℃/W
isc Website：www.iscsemi.cn