BUY77 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUY77
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 250V(Min.)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.4V(Max.)@ I_C= 5A
APPLICATIONS
·Designed for use as high-speed power switches at high
voltages.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCES Collector-Emitter Voltage
400
V
VCEO Collector-Emitter Voltage
250
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
Collector Power Dissipation
PC
@TC≤75℃
Tj
Junction Temperature
10
A
60
W
175
℃
T_stg
Storage Temperature Range
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.66 ℃/W
isc website：www.iscsemi.cn
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