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BUY70C Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUY70C
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 4A
APPLICATIONS
·Designed for switching mode power supplies, inverters, and
CRT scanning systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
3.0
A
75
W
200
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.3 â/W
isc websiteï¼www.iscsemi.cn
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