BUY70A Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUY70A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= 5.0V(Max.)@ I_C= 4A
APPLICATIONS
·Designed for switching mode power supplies, inverters, and
CRT scanning systems.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
3.0
A
75
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
2.3 ℃/W
isc website：www.iscsemi.cn
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