BUY57 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY57
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 125V(Min.)
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.3V@ I_C= 10A
APPLICATIONS
·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
150
V
VCES Collector-Emitter Voltage
150
V
VCEO Collector-Emitter Voltage
125
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC≤25℃
Tj
Junction Temperature
5
A
117
W
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 1.28 ℃/W
isc website：www.iscsemi.cn
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