BUY24 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY24
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 60V(Min.)
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.0V@ I_C= 5A
APPLICATIONS
·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC＜75℃
Tj
Junction Temperature
5
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 5.0 ℃/W
isc website：www.iscsemi.cn
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