English
Language : 

BUY18S Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
APPLICATIONS
·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC<75℃
Tj
Junction Temperature
7
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark