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BUY18S Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
APPLICATIONS
·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TCï¼75â
Tj
Junction Temperature
7
A
50
W
150
â
Tstg
Storage Temperature Range
-55~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.08 â/W
isc websiteï¼www.iscsemi.com
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