BUX98C Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH POWER NPN SILICON TRANSISTOR

isc Silicon NPN Power Transistor
isc Product Specification
BUX98C
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·High frequency and efficiency converters
·Linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-peak ( tp <5 ms )
60
A
IB
Base Current-Continuous
8
A
IBM
Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
30
A
250
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W
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