BUX98AP Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – HIGH POWER NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX98AP
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
APPLICATIONS
·High frequency and efficiency converters
·Linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
24
A
ICM
Collector Current-peak ( tp <5 ms )
36
A
IB
Base Current-Continuous
5
A
IBM
Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
8
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
Rth j-c Thermal Resistance, Junction to Case 0.63
UNIT
℃/W
isc website：www.iscsemi.com
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