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BUX97B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX97B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for use in off-line power supplies and are also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
3
A
60
W
175
â
Tstg
Storage Temperature Range
-65~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.67 â/W
isc websiteï¼www.iscsemi.cn
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