BUX88 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX88
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in three-phase AC motor control systems.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage VBE= 0
1200
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation@TC=25℃ 160
W
TJ
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
0.78 ℃/W
isc website：www.iscsemi.cn
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