BUX86 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX86
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for use in switching powe supplies of TV sets.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
1
A
IB
Base Current
0.2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
0.3
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 4.5 ℃/W
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