BUX82 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V(Min)-BUX82
= 450V(Min)-BUX83
·High Switching Speed
APPLICATIONS
·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUX82
800
V_CES Collector-Emitter Voltage
V
BUX83
1000
BUX82
400
V_CEO Collector-Emitter Voltage
V
BUX83
450
V_CER
Collector-Emitter Voltage
R_BE= 50Ω
BUX82
BUX83
500
500
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
6
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current-Continuous
2
A
I_BM
Base Current-Peak
3
A
P_C
Collector Power Dissipation @T_C=25℃
75
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.65 ℃/W
isc Product Specification
BUX82/83
isc Website：www.iscsemi.cn