BUX80 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,100W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX80
DESCRIPTION
With TO-3 package
High voltage
Fast switching speed
APPLICATIONS
Switching regulators
Motor control
High frequency and efficiency converters
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
800
400
10
10
15
5
100
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.1
UNIT
/W