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BUX78 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar PNP Device
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BUX78
DESCRIPTION
·Contunuous Collector Current-IC= -5A
·Collector Power Dissipation-
: PC= 40W @TC= 25℃
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min)
APPLICATIONS
·Designed for use in switching regulators and general purpose
power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
-0.8
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.4 ℃/W
isc website:www.iscsemi.cn
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