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| BUX77A Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66 Metal Package | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX77A
DESCRIPTION
·Contunuous Collector Current-IC= 8A
·Collector Power Dissipation-
: PC= 50W @TC= 25â
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
APPLICATIONS
·Designed for use in switching regulators and general purpose
power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â
50
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 â/W
isc websiteï¼www.iscsemi.cn
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