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| BUX67 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX67/A/B/C
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD=35W @TC= 25â
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BUX67
200
BUX67A
300
VCBO
Collector-Base Voltage
V
BUX67B
350
BUX67C
400
BUX67
150
BUX67A
250
VCEO
Collector-Emitter Voltage
V
BUX67B
300
BUX67C
350
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2.0
A
ICP
Collector Current-Peak
5.0
A
IBB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25â
35
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
isc Websiteï¼www.iscsemi.cn
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