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| BUX66B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX66B/C
DESCRIPTION
·Contunuous Collector Current-IC= -2A
·Power Dissipation-PD= 35W @TC= 25â
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BUX66B
-350
VCBO Collector-Base Voltage
V
BUX66C -400
BUX66B
-300
VCEO Collector-Emitter Voltage
V
BUX66C -350
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2.0
A
ICP
Collector Current-Peak
-5.0
A
IB
Base Current
-1.0
A
PC
Collector Power Dissipation@TC=25â
35
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.0 â/W
isc websiteï¼www.iscsemi.cn
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