BUX66 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX66/A
DESCRIPTION
·Contunuous Collector Current-I_C= -2A
·Power Dissipation-P_D= 35W @T_C= 25℃
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= -2.5V(Max)@ I_C = -1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUX66
-200
V_CBO
Collector-Base Voltage
V
BUX66A
-300
BUX66
-150
V_CEO
Collector-Emitter Voltage
V
BUX66A
-250
V_EBO
I_C
I_CP
I_BB
P_C
T_J
T_stg
Emitter-Base Voltage
-6
V
Collector Current-Continuous
-2.0
A
Collector Current-Peak
-5.0
A
Base Current
-1.0
A
Collector Power Dissipation@T_C=25℃
35
W
Junction Temperature
200
℃
Storage Temperature
-65~200 ℃
isc Website：www.iscsemi.cn