BUX59 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX59
DESCRIPTION
·Low Saturation Voltage
·Fast Switching Speed
APPLICATIONS
·Designed for use in high frequency and efficiency
converters,switching regulators and motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃
70
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0
℃/W
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