BUX47AFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX47AFI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V (Min)
·Fast Switching Speed
APPLICATIONS
Designed for high voltage, fast switching applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCER
VCES
Collector-Emitter Voltage
(RBE= 10Ω)
Collector-Emitter Voltage
(VBE= 0)
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak t_p< 5ms
IB
Base Current-Continuous
IBM
Base Current-peak t_p< 5ms
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1000
V
900
V
450
V
7
V
9
A
15
A
8
A
10
A
65
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.92 ℃/W
isc website：www.iscsemi.cn
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