BUX47A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX47A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V (Min)
·Fast Switching Speed
APPLICATIONS
Designed for high voltage, fast switching applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CER
V_CES
Collector-Emitter Voltage
(R_BE= 10Ω)
Collector-Emitter Voltage
(V_BE= 0)
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak t_p< 5ms
I_BB
Base Current-Continuous
I_BM
Base Current-peak t_p< 5ms
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
1000
V
900
V
450
V
7
V
9
A
15
A
8
A
10
A
125
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.2
UNIT
℃/W
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