BUX45 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX45
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.0V(Max.) @ I_C= 1A
·High Switching Speed
APPLICATIONS
·Designed for high speed, high voltage, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEX
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
500
V
500
V
500
V
7
V
5
A
7
A
1
A
120
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.46 ℃/W
isc website：www.iscsemi.cn
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