BUX42 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER METAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX42
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.2V (Max.)@I_C= 4A
·Fast Switching Speed
APPLICATIONS
·Designed for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CEO
V_CEX
V_CBO
Collector-Emitter Voltage
Collector-Emitter Voltage
V_BE= -1.5V
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
250
V
300
V
300
V
7
V
12
A
15
A
2.4
A
120
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.46 ℃/W
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