 English |
|
|
|
|
|
|
|
| BUX41 Datasheet, PDF (1/2 Pages) Motorola, Inc – 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX41
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250
V
VCEO(SUS) Collector-Emitter Voltage
200
V
VCEX Collector-Emitter Voltage VBE= -2.5V
250
V
VCER Collector-Emitter Voltage RBE= 100Ω
240
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100â
TJ
Junction Temperature
3
A
120
W
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese