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BUX37 Datasheet, PDF (1/2 Pages) GE Solid State – 15 AMPERE NPN MONOLITHIC DARLINGTON POWER TRANSISTOR
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BUX37
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
APPLICATIONS
·Power switching
·Solenoid drivers
·Automotive ignition
·Series and shunt regulators
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
15
A
IBB
Base Current
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
35
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.5 ℃/W
isc Website:www.iscsemi.cn