BUX33B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX33B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 500V(Min.)
·High Switching Speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
VCEV
VCER
VCEX
Collector-Emitter Voltage
VBE= 1.5V
Collector-Emitter Voltage
RBE= 10Ω
Collector-Emitter Voltage
VBE= -1.5V
1000
1000
550
VCEO Collector-Emitter Voltage
500
UNIT
V
V
V
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
4
A
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 1.0 ℃/W
isc website：www.iscsemi.cn
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