BUX32 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min)-BUX32
= 450V (Min)-BUX32A
= 450V (Min)-BUX32B
·Low Saturation Voltage
APPLICATIONS
·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CES
Collector- Emitter
Voltage(V_BE= 0)
BUX32
800
BUX32A
900
V
BUX32B 1000
V_CEO
Collector-Emitter
Voltage
BUX32
400
BUX32A
450
V
BUX32B
500
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.0 ℃/W
isc Product Specification
BUX32/A/B
isc Website：www.iscsemi.cn