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| BUX31 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX31
= 450V (Min)-BUX31A
= 450V (Min)-BUX31B
·Low Saturation Voltage
APPLICATIONS
·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and
pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
BUX31
800
BUX31A
900
V
BUX31B 1000
VCEO
Collector-Emitter
Voltage
BUX31
400
BUX31A
450
V
BUX31B
500
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
150
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 â/W
isc Product Specification
BUX31/A/B
isc Websiteï¼www.iscsemi.cn
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