BUX25 Datasheet, PDF (1/2 Pages) Seme LAB – NPN SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX25
DESCRIPTION
·Low Collector Saturation Voltage-
·High Switching Speed
·High Current Current Capability
APPLICATIONS
·Desinged for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
500
V
500
V
7
V
15
A
20
A
3
A
350
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.5 ℃/W
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