BUX20A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX20A
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 125V(Min)
·High Current Capability
·Good Linearity of h_FE
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
V_CEO(SUS) Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=100℃
T_J
Junction Temperature
T_stg
Storage Temperature
160
V
125
V
7
V
40
A
50
A
8
A
140
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
0.7
℃/W
isc Website：www.iscsemi.cn