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BUX20 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTOR
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX20
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
160
V
125
V
7
V
50
A
ICM
Collector Current-Peak
60
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100℃
TJ
Junction Temperature
Tstg
Storage Temperature
10
A
350
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.7
UNIT
℃/W
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