BUX18 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 200V(Min)- BUX18
= 325V(Min)- BUX18A
= 375V(Min)- BUX18B
= 425V(Min)- BUX18C
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUX18
250
BUX18A 350
Collector-Emitter Voltage
VCEV
VBE= -1.5V
V
BUX18B 400
BUX18C 475
BUX18
200
BUX18A 325
VCEO(SUS) Collector-Emitter Voltage
V
BUX18B 375
BUX18C 425
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃ 120
W
TJ
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc Product Specification
BUX18/A/B/C
isc website：www.iscsemi.cn
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