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| BUX17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min)- BUX17
= 250V(Min)- BUX17A
= 300V(Min)- BUX17B
= 350V(Min)- BUX17C
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BUX17
250
VCEV
Collector-Emitter Voltage
VBE= -1.5V
BUX17A
BUX17B
350
400
V
BUX17C 450
BUX17
150
BUX17A 250
VCEO(SUS) Collector-Emitter Voltage
V
BUX17B 300
BUX17C 350
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
â/W
isc Product Specification
BUX17/A/B/C
isc Websiteï¼www.iscsemi.cn
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