BUX16 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 200V(Min)- BUX16
= 250V(Min)- BUX16A
= 300V(Min)- BUX16B
= 350V(Min)- BUX16C
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
Inverters , deflection circuits , switching regulators, and
high voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BUX16
250
V_CBO Collector-Base Voltage
BUX16A 325
BUX16B 375
BUX16C 425
BUX16
225
V_CER
Collector-Emitter Voltage
R_BE≤50Ω
BUX16A
BUX16B
300
350
BUX16C 400
BUX16
200
BUX16A 250
V_CEO(SUS) Collector-Emitter Voltage
BUX16B 300
BUX16C 350
V_EBO Emitter-Base Voltage
6
I_C
Collector Current-Continuous
5
I_BB
Base Current-Continuous
2
P_C
Collector Power Dissipation@T_C=25℃ 100
T_J
Junction Temperature
200
T_stg
Storage Temperature
-65~200
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.75
UNIT
℃/W
isc Website：www.iscsemi.cn
isc Product Specification
BUX16/A/B/C